Product Images
Datasheet PDF
Enlarge View
Download PDF
OmniChip Technology
GuaranTee Supplier
11 Years
SHYG015N10NS1TA
SHYG015N10NS1TA is a 100V/380A N-MOSFET with 1.2mΩ RDS(on) and split-gate trench tech for high-current switching in TOLL-8.
- Drain-Source Voltage (Vdss) ：100V
- Continuous Drain Current (Id) ：380A
- On-Resistance (RDS(on)) ：1.2mΩ@10V
- Power Dissipation (Pd) ：431W
- Gate Threshold Voltage (Vgs(th))：3V
- Product packaging ：TOLL-8
- Packing Method ：Tape & Reel
- Gross Weight ：1.0948(g)
USD 1.084
12000
Supplier Information
Email：[email protected]
Tel：15670610275
Recommended products
IRLML9301TR(UMW)
IRLML9301TR is a trench MOSFET featuring low RDS(on), low gate charge, and 2.5V gate drive capability, ideal for load switching applications.
collect：0
IRFR5505TR(UMW)
IRFR5505TR is a -60V P-channel trench MOSFET rated at -10A, featuring low RDS(on), low gate charge, and 4.5V gate drive capability.
collect：0
2N7002B
2N7002B is an N-channel MOSFET featuring low RDS(on), high saturation current capability, and reliable voltage-controlled switching for portable load switches and DC/DC converters.
collect：0
STP4925A(UMW)
STP4925A is a dual P-channel logic-level power MOSFET featuring DMOS trench technology and low RDS(on) for efficient power switching.
collect：0