OmniChip Technology
  • MJD3055
  • MJD3055
  • MJD3055
  • MJD3055
  • MJD3055
  • MJD3055
  • MJD3055
  • MJD3055
  • MJD3055
  • MJD3055

MJD3055

MJD3055 is a power transistor for general-purpose amplification and low-speed switching, with electrical characteristics similar to MJE3055 and DC current gain specified at 10A.

  • Transistor Polarity:NPN
  • Collector Current (Ic):10A
  • Collector-Emitter Breakdown Voltage (Vceo):60V
  • Power Dissipation (Pd):1.25W
  • DC Current Gain (hFE):20
  • Transition Frequency (fT):2MHz
  • Package:TO-252-2L
  • Packaging Type:Tape&Reel

USD 0.35

1900

contact shop

Supplier Information

Email:[email protected]

Tel:15670610275

Recommended products

MMDT3904

MMDT3904 is an NPN transistor with an epitaxial planar die structure, designed for low-power amplification and switching applications.

collect:0

SS8550(RANGE:200-350)

SS8550 is a PNP transistor with 200–350 hFE and high collector current, complementary to SS8050 for switching, amplification and power control applications.

collect:0

BC847(RANGE:200-450)

BC847 is an NPN transistor with 200–450 hFE, suitable for automatic insertion, switching and audio amplifier applications.

collect:0

SS8550(RANGE:120-200)

SS8550 is a 25V 1.5A PNP transistor with 120–200 hFE, suitable for general-purpose switching, amplification and high-current electronic applications.

collect:0