OmniChip Technology
  • 1N5819WT
  • 1N5819WT
  • 1N5819WT
  • 1N5819WT
  • 1N5819WT
  • 1N5819WT
  • 1N5819WT
  • 1N5819WT
  • 1N5819WT
  • 1N5819WT

1N5819WT

This Schottky barrier diode features fast recovery, 5µA leakage current, and guard-ring protection, ideal for high-frequency switching circuits and battery protection .

  • Positive pressure drop (Vf) :600mV@200mA
  • DC reverse withstand voltage (Vr) :40V
  • Rectified current :350mA
  • Reverse current (Ir) :350mA
  • Non repetitive peak surge current (Ifsm):350mA
  • Product packaging :350mA
  • Packing Method :Tape & Reel
  • Gross Weight :0.0223(g)

USD 0.0083

12000

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Supplier Information

Email:[email protected]

Tel:15670610275

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